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2SK3472
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3472
Switching Regulator Applications
Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 20 122 1 2 150 -55 to150 Unit V V V A A W mJ A mJ C C
Pulse (Note 1)
JEDEC JEITA TOSHIBA
SC-64 2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
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2SK3472
Electrical Characteristics (Tc = 25C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 360 V, VGS = 10 V, ID = 1 A - Duty < 1%, tw = 10 s = VDD 200 V - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 10 ID = 0.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 450 2.0 0.3 Typ. 4.0 0.8 180 2 20 7 15 30 70 5 3 2 Max 10 100 4.0 4.6 ns nC pF Unit A V A V V S
RL = 400
Source-Drain Ratings and Characteristics (Tc = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 350 1.3 Max 1 2 -1.7 Unit A A V s C
Marking
Lot Number
Type
K3472
Month (starting from alphabet A) Year (last number of the christian era)
2
2002-03-04
2SK3472
ID - VDS
1.0 Common source 10 Tc = 25C pulse test 8.0 0.6 2.0 5.75 6.0 5.5 1.6 10 8.0
ID - VDS
6.25 6.0 Common source Tc = 25C pulse test
0.8
(A)
ID
ID
(A)
5.25
1.2
5.75
Drain current
Drain current
0.4
5.0 4.75
0.8
5.5 5.25
0.2
VGS = 4.5 V
0.4
5.0 VGS = 4.5 V
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
2.0 Common source VDS = 20 V pulse test 20
VDS - VGS
Common source Tc = 25C pulse test
1.6
(V) Drain-source voltage VDS
16
ID
(A)
1.2
12
Drain current
0.8 100 0.4 25 Tc = -55C 0 0 2 4 6 8 10
8
4 0.25 0
ID = 1 A 0.5
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
Yfs - ID
10 Common source 5V DS = 20 V 3 pulse test Tc = -55C 25 100
RDS (ON) - ID
50 Common source
(S)
Yfs
Forward transfer admittance
() RDS (ON)
1 0.5 0.3
Drain-source on resistance
30 Tc = 25C pulse test
10
5 3
VGS = 10, 15 V
0.1 0.05 0.02 0.1
0.3
0.5
1
3
5
10
1 0.1
0.3
0.5
1
3
5
10
Drain current
ID
(A)
Drain current
ID
(A)
3
2002-03-04
2SK3472
RDS (ON) - Tc
()
16 Common source VGS = 10 V pulse test 10 Common source
IDR - VDS
Drain-source on resistance RDS (ON)
(A)
12
3
pulse test
IDR
8 0.5 2
Drain reverse current
ID = 1 A
1
0.3
0.25
0.1
10 3
1
0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2
0 -80
-40
0
40
80
160
0.01
0
-0.2
-0.4
Case temperature
Tc
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
500 300 5 Ciss
Vth - Tc
Common source VDS = 10 V ID = 1 mA pulse test
Gate threshold voltage Vth (V)
4
(pF)
100 50 30 Coss 10 5 3 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10
3
Capacitance
C
2
1
Crss 30 50 100 0 -80 -40 0 40 80 120 160
1 0.1
Drain-source voltage VDS
(V)
Case temperature Tc
(C)
PD - Tc
40 500
Dynamic input/output characteristics
Common source ID = 1 A Tc = 25C pulse test VDS 90 300 VDS = 360 V 12 180 20
(W)
(V)
400
16
Drain power dissipation
Drain-source voltage VDS
20
200 VGS 100
8
10
4
0 0
40
80
120
160
200
0 0
20
40
60
80
0 100
Case temperature
Tc
(C)
Total gate charge
Qg
(nC)
4
2002-03-04
Gate-source voltage
VGS
PD
30
(V)
2SK3472
rth - tw
10
Normalized transient thermal impedance
3
rth (t)/Rth (ch-a)
1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 1 10
Pulse width
tw
(S)
Safe operating area
30 150
EAS - Tch
(mJ) Avalanche energy EAS
ID max (pulsed) * ID max (continuous) 1 ms * 100 s * DC operation Tc = 25C *: Single nonrepetitive pulse Tc = 25C
10
120
3
ID
(A)
90
1
Drain current
60
0.3
30
0.1 0 25 50 75 100 125 150
00.3 Curves must be derated linearly with increase in temperature. 00.1 0.1 1
Channel temperature (initial) Tch
VDSS max 10 100
(C)
Drain-source voltage VDS
(V)
15 V -15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 VDD = 90 V, L = 203 mH AS =
Wave form 1 B VDSS L I2 B 2 VDSS - VDD
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2SK3472
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-03-04

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